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HGTD1N120BNS, HGTP1N120BN
Data Sheet January 2001
5.3A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49316.
Features
* 5.3A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Avalanche Rated * Temperature Compensating SABERTM Model Thermal Impedance SPICE Model www.fairchildsemi.com * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER HGTD1N120BNS HGTP1N120BN PACKAGE TO-252AA TO-220AB BRAND 1N120B 1N120BN
Packaging
JEDEC TO-220AB
E C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
COLLECTOR (FLANGE)
Symbol
C
G
JEDEC TO-252AA
COLLECTOR (FLANGE)
E
G E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified ALL TYPES 1200 5.3 2.7 6 20 30 6A at 1200V 60 0.476 10 -55 to 150 300 260 8 13 UNITS V A A A V V W W/oC mJ oC
oC oC
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature. 2. ICE = 7A, L = 400H, VGE = 15V, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 82.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = 1200V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 15 6.0 6 TYP 20 2.5 3.8 7.1 9.2 14 15 MAX 250 1.0 2.9 4.3 250 20 21 UNITS V V A A mA V V V nA A V nC nC
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 1.0A VGE = 15V
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
VGE(TH) IGES SSOA VGEP QG(ON)
IC = 50A, VCE = VGE VGE = 20V TJ = 150oC, RG = 82, VGE = 15V, L = 2mH, VCE(PK) = 1200V IC = 1.0A, VCE = 600V IC = 1.0A VCE = 600V VGE = 15V VGE = 20V
(c)2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC IGBT and Diode at TJ = 150oC ICE = 1.0 A VCE = 960V VGE = 15V RG = 82 L = 4mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 1.0A VCE = 960V VGE = 15V RG = 82 L = 4mH Test Circuit (Figure 18) MIN TYP 15 11 67 226 70 172 90 13 11 75 258 145 385 120 MAX 20 14 76 300 187 123 17 15 88 370 440 175 2.1 UNITS ns ns ns ns J J J ns ns ns ns J J J
oC/W
Typical Performance Curves
6 ICE , DC COLLECTOR CURRENT (A)
(Unless Otherwise Specified)
ICE, COLLECTOR TO EMITTER CURRENT (A)
7 6 5 4 3 2 1 0
VGE = 15V 5 4 3 2 1 0
TJ = 150oC, RG = 82, VGE = 15V, L = 2mH
25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
TC , CASE TEMPERATURE (oC)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
(c)2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN Typical Performance Curves
300 fMAX, OPERATING FREQUENCY (kHz) 200 100
(Unless Otherwise Specified) (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
TJ = 150oC, RG = 82, L = 4mH, VCE = 960V TC = 75oC, VGE = 15V IDEAL DIODE
TC 75oC 75oC 110oC 110oC
VGE 15V 13V 15V 13V
VCE = 840V, RG = 82, TJ = 125oC tSC
18
18
16
16
14
ISC
14
10
5 0.5
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 2.1oC/W, SEE NOTES 1.0 2.0 3.0
12
12
10 13 13.5 14 14.5 VGE , GATE TO EMITTER VOLTAGE (V)
10 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
6 5 4 3 2 1 0 TC = 25oC
6 5 4 3 2 1 0 TC = -55oC TC = 150oC
TC = 25oC
TC = -55oC TC = 150oC
PULSE DURATION = 250s DUTY CYCLE < 0.5%, VGE = 13V 0 2 4 6 8 10
PULSE DURATION = 250s DUTY CYCLE < 0.5%, VGE = 15V 0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200 EON2 , TURN-ON ENERGY LOSS (J) EOFF , TURN-OFF ENERGY LOSS (J) RG = 82, L = 4mH, VCE = 960V 1000 800 600 400 200 0 0.5 TJ = 150oC, VGE = 13V TJ = 150oC, VGE = 15V
250 RG = 82, L = 4mH, VCE = 960V 200 TJ = 150oC, VGE = 13V OR 15V
150 TJ = 25oC, VGE = 13V OR 15V
100
TJ = 25oC, VGE = 13V TJ = 25oC, VGE = 15V 1 1.5 2 2.5 3
50
0
0.5
1
1.5
2
2.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
(c)2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
ISC, PEAK SHORT CIRCUIT CURRENT (A) 3
20
20
HGTD1N120BNS, HGTP1N120BN Typical Performance Curves
24 td(ON)I , TURN-ON DELAY TIME (ns) RG = 82, L = 4mH, VCE = 960V 24 trI , RISE TIME (ns) 20 20 16 12 TJ = 25oC, TJ = 150oC, VGE = 15V 8 4 0.5 TJ = 25oC, TJ = 150oC, VGE = 13V
(Unless Otherwise Specified) (Continued)
28 RG = 82, L = 4mH, VCE = 960V
16
TJ 25oC 150oC
VGE
12
13V 13V 25oC 15V 150oC 15V
8 0 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A)
1
1.5
2
2.5
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
84 td(OFF)I , TURN-OFF DELAY TIME (ns) 80 76 72 68 64 60 56
RG = 82, L = 4mH, VCE = 960V TJ = 150oC, VGE = 15V tfI , FALL TIME (ns)
360 RG = 82, L = 4mH, VCE = 960V 320 280 240 200 160 2 2.5 3 120 0.5 TJ = 25oC, VGE = 13V OR 15V TJ = 150oC, VGE = 13V OR 15V
TJ = 150oC, VGE = 13V TJ = 25oC, VGE = 15V
TJ = 25oC, VGE = 13V
0.5
1
1.5
1
1.5
2
2.5
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
18 16 14 12 10 8 6 4 2 0 7
15 VGE , GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 20V PULSE DURATION = 250s TC = -55oC VCE = 800V 12 VCE = 400V 9 VCE = 1200V
TC = 25oC TC = 150oC
6
3 IG(REF) = 1mA, RL = 600, TC = 25oC 0 0 4 8 12 16 20
8
9
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN Typical Performance Curves
350 FREQUENCY = 1MHz 300 C, CAPACITANCE (pF) CIES 250 200 150 100 COES 50 CRES 0 0 5 10 15 20 25
(Unless Otherwise Specified) (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
6 PULSE DURATION = 250s DUTY CYCLE < 0.5%, TC = 110oC 5 4 3 VGE = 10V 2 1 0 VGE = 15V VGE = 12V
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
ZJC , NORMALIZED THERMAL RESPONSE
2.0 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.005 10-5 10-4 10-3 10-2 SINGLE PULSE PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 100 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
VGE RHRD4120 90% 10% EON2 L = 4mH RG = 82 + ICE 90% VCE VDD = 960V tfI td(OFF)I 10% td(ON)I trI EOFF ICE
-
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
(c)2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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